Description

The R1Q#A7236 is a 2,097,152-word by 36-bit and the R1Q#A7218 is a 4,194,304-word by 18-bit synchronous

quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory

cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled

by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable

for applications which require synchronous operation, high speed, low voltage, high density and wide bit

configuration. These products are packaged in 165-pin plastic FBGA package.

# = A: Read Latency =2.5, w/o ODT # = G: Read Latency =2.0, w/o ODT

# = D: Read Latency =2.5, w/ ODT # = K: Read Latency =2.0, w/ ODT

hinT=00000.1100.1100.0000.0000---

00000.0000.0000.0000.0000---

00000.0000.0000.0000.0000---QDRII+_RL25

Features

႑ Power Supply

• 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)

႑ Clock

• Fast clock cycle time for high bandwidth

• Two input clocks (K and /K) for precise DDR timing at clock rising edges only

• Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems

• Clock-stop capability with μs restart

႑ I/O

• Separate independent read and write data ports with concurrent transactions

• 100 bus utilization DDR read and write operation

• HSTL I/O

• User programmable output impedance

• DLL/PLL circuitry for wide output data valid window and future frequency scaling

• Data valid pin (QVLD) to indicate valid data on the output

႑ Function

• Four-tick burst for reduced address frequency

• Internally self-timed write control

• Simple control logic for easy depth expansion

• JTAG 1149.1 compatible test access port

႑ Package

• 165 FBGA package (15 x 17 x 1.4 mm)