Description

The R1Q3A7236 is a 2,097,152-word by 36-bit and the R1Q3A7218 is a 4,194,304-word by 18-bit

synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS sixtransistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input

registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K.

These products are suitable for applications which require synchronous operation, high speed, low voltage,

high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.

Features

Power Supply

• 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)

Clock

• Fast clock cycle time for high bandwidth

• Two input clocks (K and /K) for precise DDR timing at clock rising edges only

• Two input clocks for output data (C and /C) to minimize clock skew and flight time mismatches

• Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems

• Clock-stop capability with s restart

I/O

• Separate independent read and write data ports with concurrent transactions

• 100 bus utilization DDR read and write operation

• HSTL I/O

• User programmable output impedance

• DLL/PLL circuitry for wide output data valid window and future frequency scaling

Function

• Four-tick burst for reduced address frequency

• Internally self-timed write control

• Simple control logic for easy depth expansion

• JTAG 1149.1 compatible test access port

Package

• 165 FBGA package (13 x 15 x 1.4 mm)

• RoHS Compliance Level = 6/6