Description

Renesas Electronics’ R1EV5801MB is an electrically erasable and programmable ROM organized as 131072-word  8-

bit. It has realized high speed, low power consumption and high reliability by employing advanced MONOS memory

technology and CMOS process and circuitry technology. It also has a 128-byte page programming function to make the

write operations faster.

Features

 Single voltage supply: 2.7 V to 5.5 V

 Access time:

 150 ns (max) at Vcc=4.5 V to 5.5 V

 250 ns (max) at Vcc=2.7 V to 5.5 V

 Power dissipation

 Active: 20 mW/MHz, (typ)

 Standby: 110 W (max)

 On-chip latches: address, data, CE, OE, WE

 Automatic byte write: 10 ms (max)

 Automatic page write (128 bytes): 10 ms (max)

 Data polling and RDY/Busy

 Data protection circuit on power on/off

 Conforms to JEDEC byte-wide standard

 Reliable CMOS with MONOS cell technology

 104

or more erase/write cycles

 10 or more years data retention

 Software data protection

 Write protection by RES pin

 Temperature range: 40 to +85C

 There are lead free products.