1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE

FOR 9.8 Gb/s CPRI and 10G E-PON ONU APPLICATION

DESCRIPTION

The NX6351GP series is a 1 270/1 290/1 310/1 330/1 350 nm Multiple

Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser

diode with InGaAs monitor PIN-PD.

APPLICATIONS

• 9.8 Gbps CPRI

• 10G E-PON ONU

FEATURES

• Optical output power PO = 8.5 mW

• Low threshold current Ith = 7 mA

• Differential efficiency ηd = 0.35 W/A

• Wide operating temperature range TC = −40 to +85°C

• InGaAs monitor PIN-PD

• CAN package φ 5.6 mm

• Focal point 10.2 mm