1 550 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS

DESCRIPTION

The NX5530SA is a 1 550 nm Multiple Quantum Well (MQW) structured

Fabry-Perot (FP) laser diode. This device is specified to operate under

pulsed condition and designed for light source of Optical Time Domain

Reflectometer (OTDR).

FEATURES

• High output power PO = 250 mW @ IFP = 1 000 mA*1

• Long wavelength λC = 1 550 nm

*1 Pulse Conditions: Pulse width (PW) = 10 μs, Duty = 1