Description

This product is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

 Super low on-state resistance : RDS(on) = 29.5 m Max. ( VGS = -10 V, ID = -18 A )

RDS(on) = 37.5 m Max. ( VGS = -4.5 V, ID = -18 A )

 Low input capacitance : Ciss = 3100 pF Typ.

 Designed for automotive application and AEC-Q101 qualified.

 Pb-free (This product does not contain Pb in the external electrode)