Description

The NP20P06YLG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

 Low on-state resistance

RDS(on) = 47 m MAX. (VGS = –10 V, ID = –10 A)

RDS(on) = 64 m MAX. (VGS = –5 V, ID = –10 A)

RDS(on) = 70 m MAX. (VGS = –4.5 V, ID = –10 A)

 Logic level drive type

 Gate to Source ESD protection diode built in

 Designed for automotive application and AEC-Q101 qualified