Description

This product is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

 Super low on-state resistance : RDS(on) = 40 m Max. ( VGS = -10 V, ID = -7.5 A )

RDS(on) = 60 m Max. ( VGS = -4.5 V, ID = -7.5 A )

 Low input capacitance : Ciss = 1100 pF Typ.

 Built-in gate protection diode

 Designed for automotive application and AEC-Q101 qualified.

 Pb-free (This product does not contain Pb in the external electrode)