FEATURES

• The device is an ideal choice for low noise, high-gain at low current amplifications.

⎯ NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz

⎯ NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.2 GHz

• Maximum stable power gain: MSG = 21.5 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 2 GHz

• High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V

• Flat-lead 4-pin thin-type super minimold (M05) package