位置:NESG2021M05 > NESG2021M05详情

NESG2021M05中文资料

厂家型号

NESG2021M05

文件大小

159.35Kbytes

页面数量

14

功能描述

NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

射频硅锗晶体管 RO 551-NESG2021M05-A

数据手册

下载地址一下载地址二到原厂下载

生产厂商

RENESAS

NESG2021M05数据手册规格书PDF详情

FEATURES

• This device is an ideal choice for low noise, high-gain at low current amplifications.

⎯ NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz

⎯ NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz

• Maximum stable power gain: MSG = 22.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

• High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V

• Flat-lead 4-pin thin-type super minimold (M05) package

NESG2021M05产品属性

  • 类型

    描述

  • 型号

    NESG2021M05

  • 功能描述

    射频硅锗晶体管 RO 551-NESG2021M05-A

  • RoHS

  • 制造商

    Infineon Technologies 发射极 - 基极电压

  • 封装

    Reel

更新时间:2025-10-6 14:14:00
供应商 型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
25+
SOT343
18239
RENESAS/瑞萨原装特价NESG2021M05-T1-A即刻询购立享优惠#长期有货
RENESAS
24+
SOT343-4
2600
原装现货假一赔十
RENESAS/瑞萨
2450+
SOT23-4
8850
只做原装正品假一赔十为客户做到零风险!!
NEC
24+
SOT343
9700
绝对原装正品现货假一罚十
NEC
17+
SOT-343
6200
100%原装正品现货
NEC
16+
SOT-343
10000
进口原装现货/价格优势!
NEC
6000
面议
19
SMD(贴片)
NEC
19+
S0T-23-6
500
只做原装可拆样品
NEC
23+
SOT343
50000
全新原装正品现货,支持订货
NEC
21+
SOT-343
10000
原装现货假一罚十