30 W S-BAND POWER GaAs FET

N-CHANNEL GaAs MES FET

DESCRIPTION

The NES2527B-30 is power GaAs FET which

provides high output power and high gain in the 2.5 - 2.7

GHz band.

Internal input matching circuits are designed to

optimize performance. The device has a 0.8 mm gate

length for increased linear gain. To reduce thermal

resistance, the device uses PHS (Plated Heat Sink)

technology.

The device incorporates WSi (tungsten silicide) gate

for high reliability and SiO2 glassivation for surface

stability.

FEATURES

• High output power

• High gain

• High power added efficiency

• Internally matched input

• High reliability