DESCRIPTION

The NES2427P-45 is a 45 W push-pull type GaAs MES FET designed for high power transmitter applications for

WLL repeater and base station systems. It is capable of delivering 45 W of output power (CW) with high linear gain,

high efficiency and excellent distortion under the condition of 12 V operation. Its primary band is 2.4 to 2.7 GHz. The

device employs 0.9 mm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for

superior performance, thermal characteristics, and reliability.

Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

• Push-pull type N-channel GaAs MES FET

• VDS = 12.0 V operation

• High output power: Pout = 45 W TYP.

• High linear gain: GL = 11 dB TYP.

• High power added efficiency: hadd = 41 TYP. @ VDS = 12.0 V, IDset = 4.0 A (total), f = 2.70 GHz