DESCRIPTION

The NES1823S-90 is a 90 W single-end type GaAs FET designed for high power transmitter applications for IMT-

2000 base station systems. It is capable of delivering 90 W of output power (CW) with high linear gain, high efficiency

and excellent distortion under the condition of 12.0 V operation. Its primary band is 1.8 to 2.3 GHz. The device

employs 0.7 μm Tungsten Silicide gates, via holes, plated heatsink, and silicon dioxide passivation for superior

performance, thermal characteristics, and reliability.

FEATURES

• Single-end type GaAs FET

• VDS = 12.0 V operation

• High output power: Pout = 90 W TYP.

• High linear gain : GL = 13.0 dB TYP.

• High power added efficiency: ηadd = 50 TYP. @ VDS = 12.0 V, IDset = 1.5 A, f = 2.17 GHz

• Hollow plastic package