DESCRIPTION

NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs

and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable

for commercial systems, industrial and space applications.

FEATURES

• Super Low Noise Figure & High Associated Gain

NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz

• Gate Length: Lg = 0.2 mm

• Gate Width : Wg = 200 mm