DESCRIPTION

The N2500N is N-channel MOS Field Effect Transistor designed for DC-DC converter and 2.5 V drive switching applications.

FEATURES

• 2.5 V drive available

• Low on-state resistance

RDS(on)1 = 5.8 Ω MAX. (VGS = 4.5 V, ID = 0.25 A)

RDS(on)2 = 6.6 Ω MAX. (VGS = 2.5 V, ID = 0.25 A)

• Low input capacitance

Ciss = 145 pF TYP.

• Small and surface mount package (SC-96)

• Built-in gate protection diode