Features

• Very low rDS(ON) 3.5mΩ (typical)

• Ultra low total gate charge 19nC (typical)

• ISL70020SEH radiation acceptance testing

○ High dose rate (50-300rad(Si)/s): 100krad(Si)

○ Low dose rate (0.01rad(Si)/s): 75krad(Si)

• ISL73020SEH radiation acceptance testing

○ Low dose rate (0.01rad(Si)/s): 75krad(Si)

• SEE hardness (see the SEE report for details)

○ SEL/SEB LETTH (VDS = 40V, VGS = 0V):

86.4MeV•cm2/mg(Si)

• Ultra small hermetically sealed 4 Ld Surface Mount

Device (SMD) package

○ Package area: 42mm2

• Full military-temperature range operation

○ TA = -55°C to +125°C

○ TJ = -55°C to +150°C

• Qualified to Renesas Rad Hard GaN FET

Screening and QCI Flow (R34TB0003EU)

○ All screening and QCI are in accordance with

MIL-PRF-38535L Class-V