Features

▪ Qualified to Renesas Rad Tolerant Screening and

QCI Flow (R34TB0004EU)

▪ High isolation:

• 71dB at 1GHz

• 60dB at 4GHz

▪ High linearity:

• IIP2 of 111dBm

• IIP3 of 64dBm at 1GHz

▪ Wide single 2.75V to 5.25V supply voltage range

▪ 3.3V and 1.8V compatible control logic

▪ Operating temperature: -55°C to +125°C

▪ 3x3mm 16-TQFN package

▪ Ni/Pd/Au lead finish (Tin (Sn)-free)

▪ TID Radiation Lot Acceptance Testing (RLAT)

(LDR: ≤10mrad(Si)/s): 30krad(Si)

▪ SEE Characterization

• No DSEE with VDD = 6.2V at 43MeV•cm2/mg

• SET <10ns with FRF = 10MHz at 43MeV•cm2/mg

▪ Manufactured using SOI wafer fab process