Features

▪ High isolation:

• 70dB at 1GHz

• 67dB at 2GHz

• 65dB at 3GHz

• 65dB at 4GHz

▪ High linearity:

• IIP2 of 111dBm

• IIP3 of 64dBm at 2GHz

▪ Wide single 2.75V to 5.25V supply voltage range

▪ 3.3V and 1.8V compatible control logic

▪ Operating temperature: -55°C to +125°C

▪ 3x3mm 16-TQFN package

▪ Ni/Pd/Au lead finish (Tin (Sn)-free)

▪ Characterized radiation levels

• Low Dose Rate (LDR) (0.01rad(Si)/s): 30krad(Si)

• Single event burnout LET 43MeV•cm2/mg

▪ Manufactured using SOI wafer fab process