Features

• DLA SMD #5962-15219

• Fabricated using P6SOI process technology

- Provides latch-up immunity

• ESD protection 8kV (HBM)

• Rail-to-rail operation

• Overvoltage protection

• Low rON. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<500Ω (typical)

• Flexible split rail operation

- Positive supply above GND (V+) . . . . . . . +10.8V to +16.5V

- Negative supply below GND (V-) . . . . . . . . -10.8V to -16.5V

• Adjustable logic threshold control with VREF pin

• Cold sparing capable (from ground). . . . . . . . . . . . . . . . .±25V

• Analog overvoltage range (from ground). . . . . . . . . . . . .±35V

• Off switch leakage . . . . . . . . . . . . . . . . . . . 100nA (maximum)

• Transition times (tR, tF) . . . . . . . . . . . . . . . . . . . 500ns (typical)

• Break-before-make switching

• Grounded metal lid (internally connected)

• Operating temperature range. . . . . . . . . . . .-55°C to +125°C

• Radiation acceptance testing

- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si)

- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 100krad(Si)

NOTE: Product capability established by initial characterization. All

subsequent lots are assurance tested to 50krad (0.01rad(Si)/s)

wafer-by-wafer.

• SEE hardness (see SEE report for details)

- SEB LETTH . . . . . . . . . . . . . . . . . . . . . . . . . 86.4MeV•cm2/mg