Features

• 1A MOSFET gate driver

• 90μA typical start-up current, 125μA maximum

• Moisture Sensitivity Level (MSL) rating is 1

• 35ns propagation delay current sense to output

• Fast transient response with Peak Current mode

control

• 9V to 13.2V operation

• Adjustable switching frequency to 1MHz

• 35ns rise time and 29ns fall time with 1nF output

load

• Trimmed timing capacitor discharge current for

accurate dead time/maximum duty cycle control

• 1.5MHz bandwidth error amplifier

• Tight tolerance voltage reference over line, load,

and temperature

• ±3 current limit threshold

• Ni/Pd/Au-Ag lead finish (Tin (Sn) free)

• Characterized radiation levels

○ Low Dose Rate (LDR) (0.01rad(Si)/s): 30krad(Si)

○ Single event burnout LET 43MeV•cm2/mg