Features

▪ Qualified to Renesas Rad Tolerant Screening and

QCI Flow (R34TB0004EU)

▪ Wide operating voltage range of 4.5V to 13.2V

▪ Up to 14.7V logic inputs (regardless of VDD level)

• Inverting and non-inverting inputs

▪ Optimized to drive enhancement mode GaN FETs

• Internal 4.5V regulated gate drive voltage

• Independent outputs for adjustable

turn-on/turn-off speeds

▪ NiPdAu-Ag Lead finish (Sn-free, Pb-free)

▪ Moisture Sensitivity Level (MSL) Rating: 1

▪ Passes NASA Low Outgassing Specifications

▪ Full military temperature range operation

• TA = -55°C to +125°C

• TJ = -55°C to +150°C

▪ TID Radiation Lot Acceptance Testing (LDR:

<0.01rad(Si)/s)

• ISL71040M30RTZ: 30krad(Si)

• ISL71040M50RTZ: 50krad(Si)

▪ SEE Characterization

• No DSEE with VDD = 16.5V at 43MeV•cm2/mg

• SET ≤15μm2 at 43MeV•cm2/mg