Features

• Electrically screened to DLA SMD# 5962-12228

• Low input offset voltage. . . . . . . . . . . . . . ±110μV, maximum

• Superb offset temperature coefficient. . .1μV/°C, maximum

• Input bias current . . . . . . . . . . . . . . . . . . . . . .±5nA, maximum

• Input bias current TC . . . . . . . . . . . . . . . ±5pA/°C, maximum

• Low current consumption . . . . . . . . . . . . . . . . . . . . . . . 440μA

• Voltage noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8nV/√Hz

• Wide supply range . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 40V

• Operating temperature range. . . . . . . . . . . .-55°C to +125°C

• Radiation environment

- SEB LETTH (VS = ±20V) . . . . . . . . . . . . . . 73.9MeV•cm2/mg

- Total dose, high dose rate. . . . . . . . . . . . . . . . . 300krad(Si)

- Total dose, low dose rate . . . . . . . . . . . . . . . . 100krad(Si)*

- SEL immune (SOI process)

* Product capability established by initial characterization. The

EH version is acceptance tested on a wafer-by-wafer basis to

50krad(Si) at low dose rate.

Related Literature

For a full list of related documents, visit our website

• ISL70417SEH product page