Features

• Electrically screened to SMD #5962-95669

• QML qualified per MIL-PRF-38535 requirements

• Maximum acquisition time

- 10V Step to 0.1% . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4µs

- 10V Step to 0.01% . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6µs

• Maximum drift current . . . . . . . . . . . . . . . . . . . . . . . . . . . 10nA

(maximum over-temperature)

• TTL compatible control input

• Power supply rejection . . . . . . . . . . . . . . . . . . . . . . . . . 80dB

• Radiation tolerance

- High dose rate (50 to 300rad(Si)/s) . . . . . . . . 100krad(Si)

- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . 100krad(Si)*

* Only the EH device is wafer-by-wafer acceptance tested at

the low dose rate and guaranteed to 50krad(Si). The

100krad(Si) limit is established by characterization only.

• No latch-up