The HIP1020 applies a linear voltage ramp to the gates of any combination of 3.3V, 5V, and 12V MOSFETs. The internal charge pump doubles a 12V bias or triples a 5V bias to deliver the high-side drive capability required when using more cost-effective N-Channel MOSFETs. The 5V/ms ramp rate is controlled internally and is the proper value to turn on most devices within the Device-Bay-specified di/dt limit. If a slower rate is required, the internally-determined ramp rate can be over ridden using an optional external capacitor.

Features

• Rise Time Controlled to Device-Bay Specifications

• No Additional Components Required

• Internal Charge Pump Drives N-Channel MOSFETs

• Drives any Combination of One, Two or Three Outputs

• Internally-Controlled Turn-On Ramp

- Optional Capacitor Selects Slower Rates

• Prevents False Turn on During Hot Insertion

• Operates using 12V or 5V Bias

• Improves Device Bay Peripheral Size Cost and Complexity

- Minimal Component Count

- Tiny 5-Pin SOT23 Package

• Controls Standard and Logic-Level MOSFETs

• Compatible with TTL and 3.3V Logic Devices

• Shutdown Current . . . . . . . . . . . . . . . . . . . . . . . . . . < 1 μA

• Operating Current . . . . . . . . . . . . . . . . . . . . . . . . . .

Applications

• Device Bay Peripherals

• Hot Plug Control

• Power Distribution Control