The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0.01nA.

Features

• High Gain-Bandwidth Product (fT) . . . . . . . . . . . . . 10GHz

• High Power Gain-Bandwidth Product. . . . . . . . . . . . 5GHz

• High Current Gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . 70

• Noise Figure (Transistor) . . . . . . . . . . . . . . . . . . . . . 3.5dB

• Low Collector Leakage Current . . . . . . . . . . . . . . <0.01nA

• Excellent hFE and VBE Matching

• Pin-to-Pin to UPA102G

• Pb-Free Plus Anneal Available (RoHS Compliant)

Applications

• Single Balanced Mixers

• Wide Band Amplification Stages

• Differential Amplifiers

• Multipliers

• Automatic Gain Control Circuits

• Frequency Doublers, Tripplers

• Oscillators

• Constant Current Sources

• Wireless Communication Systems

• Radio and Satellite Communications

• Fiber Optic Signal Processing

• High Performance Instrumentation