Description

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..

Features

• Logic level operation to (–4 to –6 V Gate drive)

• High endurance capability against to the shut-down circuit

• Built-in the over temperature shut-down circuit

• Latch type shut down operation (need 0 voltage recovery)