Features

Single 1.7V - 3.6V supply

Serial Peripheral Interface (SPI) compatible

Supports SPI modes 0 and 3

Supports RapidS™ operation

Continuous read capability through entire array

Up to 85MHz

Low-power read option up to 15MHz

Clock-to-output time (tV

) of 8ns maximum

User configurable page size

256 bytes per page

264 bytes per page (default)

Page size can be factory pre-configured for 256 bytes

Two fully independent SRAM data buffers (256/264 bytes)

Allows receiving data while reprogramming the main memory array

Flexible programming options

Byte/Page Program (1 to 256/264 bytes) directly into main memory

Buffer Write | Buffer to Main Memory Page Program

Flexible erase options

Page Erase (256/264 bytes)

Block Erase (2KB)

Sector Erase (256KB)

Chip Erase (64-Mbits)

Program and Erase Suspend/Resume

Advanced hardware and software data protection features

Individual sector protection

Individual sector lockdown to make any sector permanently read-only

128-byte, One-Time Programmable (OTP) Security Register

64 bytes factory programmed with a unique identifier

64 bytes user programmable

Hardware and software controlled reset options

JEDEC Standard Manufacturer and Device ID Read

Low-power dissipation

400nA Ultra-Deep Power-Down current (typical)

5µA Deep Power-Down current (typical)

25µA Standby current (typical)

7mA Active Read current (typical)

Endurance: 100,000 program/erase cycles per page minimum

Data retention: 20 years

Complies with full industrial temperature range

Green (Pb/Halide-free/RoHS compliant) packaging options

8-lead SOIC (0.208 wide)

8-pad Ultra-thin DFN (5 x 6 x 0.6mm)

8-pad Very-thin DFN (6 x 8 x 1.0mm)

Die in Wafer Form

Description

The AT45DB641E is a 1.7V minimum, serial-interface sequential access Flash memory ideally suited for a wide variety of

digital voice, image, program code, and data storage applications. The AT45DB641E also supports the RapidS serial

interface for applications requiring very high speed operation. Its 69,206,016 bits of memory are organized as 32,768

pages of 256 bytes or 264 bytes each. In addition to the main memory, the AT45DB641E also contains two SRAM

buffers of 256/264 bytes each. Interleaving between both buffers can dramatically increase a system's ability to write a

continuous data stream. In addition, the SRAM buffers can be used as additional system scratch pad memory, and

E

2PROM emulation (bit or byte alterability) can be easily handled with a self-contained three step read-modify-write

operation.

Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the

DataFlash®

uses a serial interface to sequentially access its data. The simple sequential access dramatically reduces

active pin count, facilitates simplified hardware layout, increases system reliability, minimizes switching noise, and

reduces package size. The device is optimized for use in many commercial and industrial applications where

high-density, low-pin count, low-voltage, and low-power are essential.

To allow for simple in-system re-programmability, the AT45DB641E does not require high input voltages for

programming. The device operates from a single 1.7V to 3.6V power supply for the erase and program and read

operations. The AT45DB641E is enabled through the Chip Select pin (CS) and accessed via a 3-wire interface consisting

of the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK).

All programming and erase cycles are self-timed.