Features

• Single 1.65 V - 3.6 V supply

• Serial Peripheral Interface (SPI) compatible

• Supports SPI modes 0 and 3

• Supports RapidS™ operation

• Continuous read capability through entire array

• Up to 85 MHz

• Low-power read option up to 15 MHz

• Clock-to-output time (tV) of 6 ns maximum

• User-configurable page size

• 256 bytes per page

• 264 bytes per page (default)

• Page size can be factory pre-configured for 256 bytes

• Two fully independent SRAM data buffers (256/264 bytes)

• Allows receiving data while reprogramming the main memory array

• Flexible programming options

• Byte/Page Program (1 to 256/264 bytes) directly into main memory

• Buffer Write

• Buffer to Main Memory Page Program

• Flexible erase options

• Page Erase (256/264 bytes)

• Block Erase (2 kB)

• Sector Erase (64 kB)

• Chip Erase (4 Mbits)

• Program and Erase Suspend/Resume

• Advanced hardware and software data protection features

• Individual sector protection

• Individual sector lockdown to make any sector permanently read-only

• 128-byte, One-Time Programmable (OTP) Security Register

• 64 bytes factory programmed with a unique identifier

• 64 bytes user programmable

• Hardware and software controlled reset options

• JEDEC Standard Manufacturer and Device ID Read

• Low-power dissipation

• 400 nA Ultra-Deep Power-Down current (typical)

• 3 µA Deep Power-Down current (typical)

• 25 µA Standby current (typical)

• 7mA Active Read current (typical @ 15 MHz))

• Endurance:

• 100,000 program/erase cycles (-40°C to +85°C)

• 10,000 program/erase cycles (-40°C to +125°C)

• Data retention: 20 years

• Complies with full industrial temperature range

• Green (Pb/Halide-free/RoHS compliant) packaging options

• 8-lead SOIC (0.150 wide and 0.208 wide)

• 8-pad Ultra-thin DFN (5 x 6 x 0.6mm)

• 8-ball Ultra-thin UBGA (6 x 6 x 0.6mm)

• Die in Wafer Form (contact factory for availability)

1. Description

The AT45DB041E is a 1.65 V minimum, serial-interface sequential access Flash memory ideally suited for a wide

variety of digital voice, image, program code, and data storage applications. The AT45DB041E also supports the

RapidS serial interface for applications requiring very high speed operation. Its 4,194,304 bits of memory are

organized as 2,048 pages of 256 bytes or 264 bytes each. In addition to the main memory, the AT45DB041E also

contains two SRAM buffers of 256/264 bytes each. The buffers allow receiving of data while a page in the main

memory is being reprogrammed. Interleaving between both buffers can dramatically increase a system's ability to

write a continuous data stream. Also, the SRAM buffers can be used as additional system scratch pad memory,

and E2PROM emulation (bit or byte alterability) can be easily handled with a self-contained three step readmodify-write operation.

Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel

interface, the DataFlash® uses a serial interface to sequentially access its data. The simple sequential access

dramatically reduces active pin count, facilitates simplified hardware layout, increases system reliability, minimizes

switching noise, and reduces package size. The device is optimized for use in many commercial and industrial

applications where high-density, low-pin count, low-voltage, and low-power are essential.

To allow for simple in-system re-programmability, the AT45DB041E does not require high input voltages for

programming. The device operates from a single 1.65 V to 3.6 V power supply for the erase and program and

read operations. The AT45DB041E is enabled through the Chip Select pin (CS) and accessed via a three-wire

interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK).

All programming and erase cycles are self-timed.