Features

• Voltage Range: 1.65 V - 3.6 V

• 32-Mbit Flash Memory

• Flexible 256-byte page erase architecture

• Serial Peripheral Interface (SPI) compatible

• Supports SPI modes 0 and 3

• Supports SPI single mode operation (1-1-1)

• Supports dual output operation (1-1-2)

• Supports quad output operation (1-1-4)

• Supports quad XiP operation (1-4-4 and

0-4-4)

• 133 MHz maximum operating frequency

• Clock-to-output of 8 ns

• Flexible, optimized erase architecture for code +

data storage applications

• Uniform 256-Byte page erase

• Uniform 4-KByte block erase

• Uniform 32-KByte block erase

• Uniform 64-KByte block erase

• Full chip erase

• Flexible non-volatile block protection

• 1 x 128-byte factory-programmed unique

identifier

• 3 x 128-byte, One Time Programmable (OTP)

security registers

• Flexible programming

• Byte/Page program (1 to 256 Bytes)

• Single command page buffer direct ReadModify-Write (page write with inclusive erase)

• Flexible 256-byte SRAM page buffer

operation

• Sequential program mode capability

• Erase program suspend resumeSoftware

controlled Reset and Terminate commands

• Hardware reset option (via /HOLD pin)

• JEDEC hardware reset

• Low battery detect circuit

• Active interrupt device status capability

• Non-volatile status register configuration option

• JEDEC standard manufacturer and device ID

read methodology

• Serial Flash Discoverable Parameters (SFDP)

version 1.6

• Low power dissipation:

• 26 µA standby current (typical)

• 7 µA Deep Power-Down (DPD) current

(typical)

• 5 - 7 nA Ultra Deep Power Down (UDPD)

current (typical)

• 8.3 mA active read current (1-1-1 — 10 MHz)

• 9.2 mA program current

• 10.2 mA erase current

• User configurable and auto I/O pin drive levels

• Endurance: 100,000 program/erase cycles

• Data Retention: 20 years

• -40 oC to +85 oC operation

• Industry standard green (Pb/Halide-free/RoHS

Compliant) Package Options

• 8-lead SOIC (150-mil)

• 8-lead SOIC (208-mil)

• Die/Wafer — Contact Renesas Electronics for

more information