Features

▪ Single voltage operation with range of 2.7 V to 3.6 V

▪ 128 Mbit (32 x 4 Mbit physical block) NOR Flash

Memory

▪ Serial Peripheral Interface (SPI) compatible support:

• Supports SPI modes 0 and 3

• Supports dual and quad output read

▪ Maximum operating frequency:

• 133 MHz maximum operating frequency at 85 oC

• 120 MHz maximum operating frequency at 105 oC

▪ Read operations:

• 70 MHz normal read

• 120 MHz fast read

• 133 MHz Quad Output fast read

• Dual I/O data transfer rate up to 240 Mbps

• Quad I/O data transfer rate up to 480 Mbps

• Quad Output data transfer rate up to 532 Mbps

• Continuous read with 8/16/32/64-byte wrap

▪ Flexible, optimized erase architecture, including

erase suspend and resume

▪ Flexible programming:

• Byte/Page program (1 to 256 Bytes)

• Program suspend and resume

▪ Fast program and erase times:

• 0.6 ms typical page (256 byte) program time

• 70 ms typical 4-kbyte block erase time

• 150 ms typical 32-kbyte block erase time

• 250 ms typical 64-kbyte block erase time

• Full chip erase: 30 s typical

▪ Hardware and software Write Protection:

• Hardware-controlled locking of protected sector

via WP pin

• Three 256-byte OTP-capable security registers

• Write protect all or part of memory via software

with top/bottom block selection

▪ Serial Flash Discoverable Parameter (SFDP)

register

▪ Low power dissipation:

• 13 µA standby current at 85 oC

• 20 µA standby current at 105 oC

• 2 µA deep power down current at 85 oC

• 5 µA deep power down current at 105 oC

▪ Endurance:

• 100K program/erase cycles at 85 oC

• 10K program/erase cycles at 105 oC

▪ Data retention:

• 100K program/erase cycles at 85 oC

• 10K program/erase cycles at 105 oC

▪ Temperature range:

• Industrial: -40 oC to 85 oC

• Extended Temperature Range: -40 oC to 105 oC

▪ Industry standard green (Pb/Halide-free/RoHS

compliant) package options

• 8-lead 0.208” Wide SOIC (8S4)

• 8-pad (5 x 6 x 0.6 mm) UDFN (8MA1)