Features

• Voltage Range: 1.65 V - 3.75 V

• 16 Mbit (2M x 8) Flash Memory

• Serial Peripheral Interface (SPI) compatible

• Supports SPI modes 0 and 3

• Supports single input/output operations (1-1-1)

• Supports dual output operation (1-1-2)

• Supports quad output operation (1-1-4)

• Supports quad I/O operation (1-4-4)

• Supports XiP operation (1-4-4, 0-4-4)

• 133 MHz maximum operating frequency

• Clock-to-output of 8 ns

• Flexible, optimized erase architecture for code

and data storage applications

• Uniform 4-kByte block erase

• Uniform 32-kByte block erase

• Uniform 64-kByte block erase

• Full chip erase

• Flexible non-volatile block protection

• 1 x 128-byte factory-programmed unique

identifier

• 3 x 128-byte, One Time Programmable (OTP)

security registers

• Flexible programming

• Byte/Page program (1 to 256 Bytes)

• Sequential program mode capability

• Erase program suspend resume

• Software controlled Reset and Terminate

commands

• Hardware reset option (via HOLD pin)

• JEDEC hardware reset

• Non-volatile status register configuration option

• JEDEC standard manufacturer and device ID

read methodology

• Serial Flash Discoverable Parameters (SFDP)

version 1.6

• Low power dissipation at 1.65 V to 3.6 V:

• 30 µA standby current (typical)

• 8.2 µA Deep Power-Down (DPD) current

(typical)

• 5 - 7 nA Ultra-Deep Power Down (UDPD)

current (typical)

• 8.3 mA active read current (1-1-1 — 108 MHz)

• 10.1 mA program current

• 10.7 mA erase current

• User configurable and auto I/O pin drive levels

• Endurance:

• 100,000 program/erase cycles

• 10,000 cycles (-40 oC to +105 oC)

• Data Retention:

• 20 years

• 10 years (-40 oC to +105 oC)

• Temperature Range:

• -40 oC to +85 oC

• -40 oC to +105 oC

• Industry standard green (Pb/Halide-free/RoHS

Compliant) Package Options

• 8-lead SOIC (150-mil)

• 8-lead SOIC (208-mil)

• 8-pad WDFN (5 x 6 x 0.8 mm)

• 8-pad Ultra-thin DFN (2 x 3 x 0.6 mm)

• 8-ball WLCSP (3 x 2 x 3 ball matrix)

• Die in Wafer Form (DWF)