Features

 Single 1.65V - 1.95V supply

 Serial Peripheral Interface (SPI) compatible

 Supports SPI Modes 0 and 3

 Supports RapidS™ operation

 Supports Dual-Input Program and Dual-Output Read

 Very high operating frequencies

 100MHz for RapidS

 85MHz for SPI

 Clock-to-output time (tV) of 5ns maximum

 Flexible, optimized erase architecture for code + data storage applications

 Uniform 4KB, 32KB, and 64KB Block Erase

 Full Chip Erase

 Individual sector protection with Global Protect/Unprotect feature

 16 sectors of 64KB each

 Hardware controlled locking of protected sectors via WP pin

 Sector Lockdown with permanent freeze option

 Make any combination of 64KB sectors permanently read-only

 128-byte, One-Time Programmable (OTP) Security Register

 64-bytes factory pre-programmed, 64-bytes user programmable

 Flexible programming

 Byte/Page Program (1 to 256 bytes)

 Fast Program and Erase times

 1.0ms typical Page Program (256 bytes) time

 50ms typical 4KB Block Erase time

 250ms typical 32KB Block Erase time

 550ms typical 64KB Block Erase time

 Program and Erase Suspend/Resume

 Automatic checking and reporting of erase/program failures

 Software controlled reset

 JEDEC Standard Manufacturer and Device ID Read Methodology

 Low power dissipation

 10mA Active Read current (typical at 20MHz)

 8µA Deep Power-Down current (typical)

 Endurance: 100,000 program/erase cycles

 Data retention: 20 years

 Complies with full industrial temperature range

 Industry standard green (Pb/halide-free/RoHS-compliant) package options

 8-lead SOIC (0.150” wide)

 8-pad Ultra-thin DFN (5 x 6 x 0.6mm)

Description

The Adesto® AT25DL081 is a serial interface Flash memory device designed for use in a wide variety of high-volume,

consumer-based applications in which program code is shadowed from Flash memory into embedded or external RAM

for execution. The flexible erase architecture of the AT25DL081, with its erase granularity as small as 4KB, makes it ideal

for data storage as well, eliminating the need for additional data storage EEPROM devices.

The physical sectoring and the erase block sizes of the AT25DL081 have been optimized to meet the needs of today's

code and data storage applications. By optimizing the size of the physical sectors and erase blocks, the memory space

can be used much more efficiently. Because certain code modules and data storage segments must reside by

themselves in their own protected sectors, the wasted and unused memory space that occurs with large sectored and

large block erase Flash memory devices can be greatly reduced. This increased memory space efficiency allows

additional code routines and data storage segments to be added, while still maintaining the same overall device density.

The AT25DL081 also offers a sophisticated method for protecting individual sectors against erroneous or malicious

program and erase operations. By providing the ability to individually protect and unprotect sectors, a system can

unprotect a specific sector to modify its contents while keeping the remaining sectors of the memory array securely

protected. This is useful in applications where the program code is patched, updated on a subroutine or module basis, or

in applications where data storage segments need to be modified without running the risk of errant modifications to the

program code segments. In addition to individual sector protection capabilities, the AT25DL081 incorporates Global

Protect and Global Unprotect features that allow the entire memory array to be either protected or unprotected all at

once. This reduces overhead during the manufacturing process because sectors do not have to be unprotected one by

one prior to initial programming.

To take code and data protection to the next level, the AT25DL081 incorporates a sector lockdown mechanism that

allows any combination of individual 64KB sectors to be locked down and become permanently read-only. This

addresses the need of certain secure applications that require portions of the Flash memory array to be permanently

protected against malicious attempts at altering program code, data modules, security information, or

encryption/decryption algorithms, keys, and routines. The device also contains a specialized, OTP (One-Time

Programmable) security register, which can be used for unique device serialization, system-level electronic serial

number (ESN) storage, locked key storage, or other purposes.

Specifically designed for use in 1.8V systems, the AT25DL081 supports read, program, and erase operations with a

supply voltage range of 1.65V to 1.95V. No separate voltage is required for programming and erasing.