Features

• Devices QML Qualified in Accordance with MIL-PRF38535

• Detailed Electrical and Screening Requirements are

Contained in SMD# 5962-96703 and Intersil’s QM Plan

• 1.25 Micron Radiation Hardened SOS CMOS

• Total Dose >300K RAD (Si)

• Single Event Upset (SEU) Immunity: <1 x 10-10

Errors/Bit/Day (Typ)

• SEU LET Threshold>100 MEV-cm2/mg

• Dose Rate Upset>1011 RAD (Si)/s, 20ns Pulse

• Dose Rate Survivability>1012 RAD (Si)/s, 20ns Pulse

• Latch-Up Free Under Any Conditions

• Military Temperature Range-55oC to +125oC

• Significant Power Reduction Compared to ALSTTL

Logic

• DC Operating Voltage Range 4.5V to 5.5V

• Input Logic Levels

- VIL = 30% of VCC Max

- VIH = 70% of VCC Min

• Input Current  1A at VOL, VOH

• Fast Propagation Delay15ns (Max), 10ns (Typ)

Description

The Intersil ACS03MS is a Radiation Hardened quad 2-input

NAND gate with open drain outputs. The open drain output

can drive resistive loads from a separate supply voltage.

The ACS03MS utilizes advanced CMOS/SOS technology to

achieve high-speed operation. This device is a member of a

radiation hardened, high-speed, CMOS/SOS Logic Family.

The ACS03MS is supplied in a 14 lead Ceramic Flatpack (K

suffix) or a Ceramic Dual-In-Line Package (D suffix).