Features

• Reference output voltage . . . . . . . . . . . . . . . . . 10.0V ±0.05

• Accuracy over temperature . . . . . . . . . . . . . . . . . . . . . ±0.15

• Accuracy over radiation . . . . . . . . . . . . . . . . . . . . . . . . ±0.25

• Output voltage noise . . . . .14.8μVP-P typical (0.1Hz to 10Hz)

• Supply current . . . . . . . . . . . . . . . . . . . . . . . . . .300μA (typical)

• VOS temperature coefficient . . . . . . . . . . 6ppm/°C maximum

• Output current capability . . . . . . . . . . . . . . . . . . .10mA/-5mA

• Line regulation . . . . . . . . . . . . . . . . . . . . . . 5ppm/V maximum

• Load regulation (sourcing) . . . . . . . . . 15ppm/mA maximum

• Operating temperature range. . . . . . . . . . . .-55°C to +125°C

• Radiation environment

- High dose rate (50 to 300rad(Si)/s) . . . . . . . . . 100krad(Si)

- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . .100krad(Si)*

- SEL/SEB free (VCC = 36V) . . . . . . . . . . . . 86MeV•cm2/mg

*Product capability established by initial characterization. The

“EH” version is acceptance tested on a wafer-by-wafer basis to

50krad(Si) at low dose rate.

• Electrically screened to SMD 5962-14208