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5962F9671101VXC中文资料

厂家型号

5962F9671101VXC

文件大小

676.71Kbytes

页面数量

3

功能描述

Radiation Hardened EDAC (Error Detection and Correction Circuit)

数据手册

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生产厂商

RENESAS

5962F9671101VXC数据手册规格书PDF详情

Features

• Devices QML Qualified in Accordance with MIL-PRF-38535

• Detailed Electrical and Screening Requirements are

Contained in SMD# 5962-96711 and Intersil’ QM Plan

• 1.25 Micron Radiation Hardened SOS CMOS

• Total Dose >300K RAD (Si)

• Single Event Upset (SEU) Immunity: <1 x 10-10 Errors/

Bit/Day (Typ)

• SEU LET Threshold>100 MEV-cm2/mg

• Dose Rate Upset>1011 RAD (Si)/s, 20ns Pulse

• Dose Rate Survivability>1012 RAD (Si)/s, 20ns Pulse

• Latch-Up Free Under Any Conditions

• Military Temperature Range-55oC to +125oC

• Significant Power Reduction Compared to ALSTTL

Logic

• DC Operating Voltage Range 4.5V to 5.5V

• Input Logic Levels

- VIL = 30 of VCC Max

- VIH = 70 of VCC Min

• Input Current  1A at VOL, VOH

• Fast Propagation Delay37ns (Max), 24ns (Typ)

Description

The Intersil ACS630MS is a Radiation Hardened 16-bit parallel

error detection and correction circuit. It uses a modified Hamming code to generate a 6-bit check word from each 16-bit data

word. The check word is stored with the data word during a

memory write cycle; during a memory read cycle a 22-bit word is

taken form memory and checked for errors. Single bit errors in

the data words are flagged and corrected. Single bit errors in

check words are flagged but not corrected. The position of the

incorrect bit is pinpointed, in both cases, by the 6-bit error

syndrome code which is output during the error correction cycle.

The ACS630MS utilizes advanced CMOS/SOS technology to

achieve high-speed operation. This device is a member of a

radiation hardened, high-speed, CMOS/SOS Logic Family.

The ACS630MS is supplied in a 28 lead Ceramic Flatpack (K

suffix) or a 28 Lead Ceramic Dual-In-Line Package (D suffix).

更新时间:2025-10-31 15:08:00
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