Features

• QML Qualified Per MIL-PRF-38535 Requirements

• 1.25Micron Radiation Hardened SOS CMOS

• Radiation Environment

- Latch-up Free Under any Conditions

- Total Dose . . . . . . . . . . . . . . . . . . . . . 3 x 105 RAD(Si)

- SEU Immunity . . . . . . . . . . .<1 x 10-10 Errors/Bit/Day

- SEU LET Threshold. . . . . . . . . . . >100MeV/(mg/cm2)

• Input Logic Levels . . VIL = (0.3)(VCC), VIH = (0.7)(VCC)

• Output Current . . . . . . . . . . . . . . . . . . . . . . ±8mA (Min)

• Quiescent Supply Current . . . . . . . . . . . . . 100A (Max)

• Propagation Delay . . . . . . . . . . . . . . . . . . . . 15ns (Max)

Description

The Radiation Hardened ACS08MS is a Quad 2-Input AND

Gate. For each gate, a HIGH level on both the A and B

inputs results in a HIGH level on the Y output. A LOW level

on either the A or B input results in a LOW level on the Y

output. All inputs are buffered and the outputs are designed

for balanced propagation delay and transition times.

The ACS08MS is fabricated on a CMOS Silicon on

Sapphire (SOS) process, which provides an immunity to

Single Event Latch-up and the capability of highly reliable

performance in any radiation environment. These devices

offer significant power reduction and faster performance

when compared to ALSTTL types.

Specifications for Rad Hard QML devices are controlled

by the Defense Supply Center in Columbus (DSCC). The

SMD numbers listed below must be used when ordering.

Detailed Electrical Specifications for the ACS08 are

contained in SMD 5962-95651.