N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

The 2SK1485, N-channel vertical type MOS FET is a switching device

which can be driven directly by the output of ICs having a 5 V power source.

As the MOS FET has low on-state resistance and excellent switching

characteristics, it is suitable for driving actuators such as motors, relays,

and solenoids.

FEATURES

• Directly driven by ICs having a 5 V power source.

• Low on-state resistance

RDS(on)1 = 1.2 Ω MAX. (VGS = 4.0 V, ID = 0.5 A)

RDS(on)2 = 0.8 Ω MAX. (VGS = 10 V, ID = 0.5 A)

• Complementary to 2SJ199.

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)