P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR HIGH SPEED SWITCHING

DESCRIPTION

The 2SJ462 is a switching device which can be driven directly

by an IC operating at 3 V.

The 2SJ462 features a low on-state resistance and can be

driven by a low voltage power source, so it is suitable for applications

such as power management.

FEATURES

• Can be driven by a 2.5 V power source.

• New-type compact package.

Has advantages of packages for small signals and for power

transistors, and compensates those disadvantages.

• Low on-state resistance.

RDS(ON) : 0.29 W MAX. @VGS = –2.5 V, ID = –0.5 A

RDS(ON) : 0.19 W MAX. @VGS = –4.0 V, ID = –1.0 A