SWITCHING

P-CHANNEL POWER MOS FET

DESCRIPTION

The 2SJ448 is P-channel MOS Field Effect Transistor designed

for high voltage switching applications.

FEATURES

• 250 V rating high withstand voltage

• Low on-state resistance:

RDS(on) = 2.0 Ω MAX. (VGS = –10 V, ID = –2.0 A)

• Low input capacitance:

Ciss = 470 pF TYP.

• Narrow gate cut-off voltage width:

VGS(off) = −5.5 to −4.0 V

• Built-in gate protection diode

• Full-mold package for easy mounting