P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH

The 2SJ358 is a P-channel vertical MOS FET that can

be used as a switching element. The 2SJ358 can be

directly driven by an IC operating at 5 V.

The 2SJ358 features a low on-resistance and excellent

switching characteristics, and is suitable for applications

such as actuator driver and DC/DC converter.

FEATURES

• New-type compact package

Has advantages of packages for small signals and for

power transistors, and compensates those disadvantages

• Can be directly driven by an IC operating at 5 V.

• Low on-resistance

RDS(ON) = 0.40 W MAX. @VGS = –4 V, ID = –1.5 A

RDS(ON) = 0.30 W MAX. @VGS = –10 V, ID = –1.5 A