位置：RM80N80T2 > RM80N80T2详情
RM80N80T2中文资料
RM80N80T2数据手册规格书PDF详情
General Features
VDS =80V,ID =80A
RDS(ON) < 8.5mΩ @ VGS=10V (Typ:7.0mΩ)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Special designed for convertors and power controls
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
更新时间：2025-11-27 11:06:00
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
75000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
Ude |
21+ |
DNA |
1536 |
公司现货,有挂就有货。 |
|||
RAYDIUM/瑞鼎 |
24+ |
QFN |
60000 |
全新原装现货 |
|||
PHI |
25+ |
QFN |
18000 |
原厂直接发货进口原装 |
|||
恩XP |
23+ |
QFN |
5000 |
原装正品,假一罚十 |
|||
RM8200R |
25+ |
30 |
30 |
||||
24+ |
CDIP |
120 |
|||||
85+ |
DIP |
44 |
普通 |
||||
RAYTHEON |
2447 |
DIP24 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
N/A |
23+ |
DIP |
50000 |
全新原装正品现货,支持订货 |
RM80N80T2 资料下载更多...
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