位置：RM80N30LD > RM80N30LD详情
RM80N30LD中文资料
RM80N30LD数据手册规格书PDF详情
General Features
VDS =30V,ID =80A
RDS(ON) <6.5mΩ @ VGS=10V
RDS(ON) < 10mΩ @ VGS=5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
更新时间：2025-10-6 11:06:00
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
57000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
NK/南科功率 |
2025+ |
TO-252(D-PAK) |
986966 |
国产 |
|||
Ude |
21+ |
DNA |
1536 |
公司现货,有挂就有货。 |
|||
RAYDIUM/瑞鼎 |
24+ |
QFN |
60000 |
全新原装现货 |
|||
PHI |
25+ |
QFN |
4897 |
绝对原装!现货热卖! |
|||
PHI |
25+ |
QFN |
18000 |
原厂直接发货进口原装 |
|||
恩XP |
23+ |
QFN |
5000 |
原装正品,假一罚十 |
|||
RM8200R |
30 |
30 |
|||||
24+ |
CDIP |
120 |
|||||
85+ |
DIP |
44 |
普通 |
RM80N30LD 资料下载更多...
RM80N30LD 芯片相关型号
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