位置:RM120N85AT2 > RM120N85AT2详情

RM120N85AT2中文资料

厂家型号

RM120N85AT2

文件大小

1296.69Kbytes

页面数量

7

功能描述

N-Channel Super Trench Power MOSFET

数据手册

下载地址一下载地址二到原厂下载

生产厂商

RECTRON

RM120N85AT2数据手册规格书PDF详情

Description

The RM120N85AT2 uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of RDS(ON) and Qg. This device is ideal for

high-frequency switching and synchronous rectification.

General Features

VDS =85V,ID =120A

RDS(ON) <6.0mΩ @ VGS=10V

Excellent gate charge x RDS(on) product(FOM)

Very low on-resistance RDS(on)

Pb-free lead plating

100 UIS tested

Application

DC/DC Converter

Ideal for high-frequency switching and synchronous rectification

Halogen-free

更新时间:2025-10-9 11:06:00
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