General Description

DOSEMI IGBT Power Discrete provides ultra

low conduction loss as well as low switching loss.

They are designed for the applications such as

inductive cooking.

Features

Low VCE(sat) Trench IGBT technology

Low switching loss

Maximum junction temperature 175oC

Low inductance case

VCE(sat) with positive temperature coefficient

Fast & soft reverse recovery anti-parallel FWD

Lead free package