DESCRIPTIONS

‘The MBSSRSM2T is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words

16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process

technologies. The MBSSRSMX2T is able to retain data without using a back-up battery, as is needed for SRAM The memory cells used in the MBSSREM2T can be used for 101 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. The MBSSREM2T uses a pseudo-SRAM interface.

FEATURES

Bit configuration 524,285 words * 16 bits

Read/write endurance +10° times / 16 bits

Data retention +10 years (+ 85 °C), 95 years (+55 °C), over 200 years (+35 °C)

Operating power supply voliage ~~: 1.8 V103.6V

Low power operation + Operating power supply current 20 mA (Max)

Standby current 300 iA (Max)

Sleep current 40 pA (Max)

Operation ambient temperature range : -40 °C to + 85 °C

Package

48-pin plastic FBGA (BGA-4SP-M24)

RoHS compliant