 DESCRIPTIONS

The MB85R8M1TA is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 1,048,576 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies.

The MB85R8M1TA is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85R8M1TA can be used for 1014 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. The MB85R8M1TA uses a pseudo-SRAM interface.

 FEATURES

• Bit configuration : 1,048,576 words × 8 bits

• Read/write endurance : 1014 times ( + 85 °C)

• Data retention : 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)

• Operating power supply voltage : 1.8 V to 3.6 V

• Low power operation : Operating power supply current 18 mA (Max)

Standby current 150 μA (Max)

Sleep current 10 μA (Max)

• Operation ambient temperature range : − 40 °C to + 85 °C

• Package : 48-pin plastic FBGA

44-pin plastic TSOP

RoHS compliant