DESCRIPTIONS

The MB85R1001A is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 131,072

words  8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS

process technologies.

The MB85R1001A is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85R1001A can be used for 1010 read/write operations, which is a significant

improvement over the number of read and write operations supported by Flash memory and E2PROM.

The MB85R1001A uses a pseudo-SRAM interface.

FEATURES

Bit configuration : 131,072 words  8 bits

Read/write endurance : 1010 times / byte

Data retention : 10 years (  55 C), 55 years (  35 C)

Operating power supply voltage : 3.0 V to 3.6 V

Low power operation : Operating power supply current 10 mA (Typ)

Standby current 10 A (Typ)

Operation ambient temperature range :  40 C to  85 C

Package : 48-pin plastic TSOP

RoHS compliant