DESCRIPTION

MB85AS12MT is a ReRAM (Resistive Random Access Memory) chip in a configuration of 1,572,864

words  8 bits, using the resistance-variable memory process and silicon gate CMOS process technologies

for forming the nonvolatile memory cells.

MB85AS12MT adopts the Serial Peripheral Interface (SPI).

MB85AS12MT is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85AS12MT can be used for 5  105 rewrite operations.

FEATURES

Bit configuration : 12 Mbits (1,572,864 words  8 bits)

Serial Peripheral Interface : SPI (Serial Peripheral Interface)

Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)

Write buffer size : 256 bytes

Operating frequency : 10 MHz (Max)

Data endurance : 5  105 times / 4bytes*

*4 bytes are selected by A1 to A0.

Data retention : 10 years (+85 C)

Operating power supply voltage : 1.6 V to 3.6 V

Operating power supply current : Write current 1.5 mA (Typ)

Read current 0.15 mA (Typ@5 MHz)

Standby current 65 A (Typ)

Sleep current 6 A (Typ)

Operation ambient temperature range : -40 C to +85 C

Package : 11-pin WLP

RoHS compliant