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型号	功能描述	生产厂家企业	LOGO
RU30	High Efficiency Rectifiers VOLTAGE RANGE: 200--- 600 V CURRENT: 3.5 , 2.0 A Features Low cost Diffused junction High current capability Low leakage Low forward voltage drop Easily cleaned with freon, alcohol, lsopropand and similar solvents Mechanical Data Case: JEDEC DO-27, molded plas	LUGUANG 鲁光电子	LUGUANG
RU30	Fast-Recovery Rectifier Diodes 100V-600V 1.5A-2.0A RU 3M/3AM RU3YX RU 30 series	TAYCHIPST 泰迪斯电子	TAYCHIPST
RU30	HIGH EFFCIENCY RECTIFIER DIODES 文件：404.503 Kbytes Page：2 Pages	SUNMATE 森美特 PDF上传者：深圳冠荣电子有限公司	SUNMATE
RU30	Fast-Recovery Rectifier Diodes 文件：23.57 Kbytes Page：1 Pages	Sanken 三垦	Sanken
RU30	HIGH EFFICIENCY RECTIFIERS 文件：274.57 Kbytes Page：2 Pages	DSK	DSK
RU30	HIGH EFFICIENCY RECTIFIERS	DSK	DSK
RU30	High Efficiency Rectifiers	LUGUANG 鲁光电子	LUGUANG
RU30	Fast-Recovery Rectifier Diodes	Sanken 三垦	Sanken
RU300D-M30M-LIU8X2-H1141	Ultrasonic Sensor – Diffuse Mode Sensor Features ■Smooth sonic transducer face ■M30 cylindrical design, potted ■Connection via M12 × 1 male connector ■Measuring range adjustable via teach-in ■Temperature compensation ■Blind zone: 30 cm ■Range: 300 cm ■Resolution: 1 mm ■Adjustable switching hysteresis ■Aperture angle of sonic c	TURCKTurck, Inc. 图尔克德国图尔克集团公司	TURCK
RU300D-M30M-UPN8X2-H1141	Ultrasonic Sensor – Diffuse Mode Sensor Features ■Smooth sonic transducer face ■M30 cylindrical design, potted ■Connection via M12 × 1 male connector ■Measuring range adjustable via teach-in ■Temperature compensation ■Blind zone: 30 cm ■Range: 300 cm ■Resolution: 1 mm ■Adjustable switching hysteresis ■Aperture angle of sonic c	TURCKTurck, Inc. 图尔克德国图尔克集团公司	TURCK
RU300U-M30E-2UP8X2T-H1151	Ultrasonic Sensor – Diffuse Mode Sensor Features ■Smooth sonic transducer face ■Cylindrical housing M30, potted ■Connection via M12 x 1 male ■Measuring range adjustable via teach button/Easy-Teach ■Temperature compensation ■Blind zone: 30 cm ■Range: 300 cm ■Resolution: 1 mm ■Aperture angle of sonic cone: ±15 ° ■2 x switching	TURCKTurck, Inc. 图尔克德国图尔克集团公司	TURCK
RU300U-M30E-LI8X2-H1151	Ultrasonic Sensor – Diffuse Mode Sensor Features ■Smooth sonic transducer face ■Cylindrical housing M30, potted ■Connection via M12 × 1 male connector ■Measuring range adjustable via Easy-Teach ■Temperature compensation ■Blind zone: 30 cm ■Range: 300 cm ■Resolution: 1 mm ■Aperture angle of sonic cone: ±15 ° ■Analog output, 4…2	TURCKTurck, Inc. 图尔克德国图尔克集团公司	TURCK
RU300U-M30E-LU8X2-H1151	Ultrasonic Sensor – Diffuse Mode Sensor Features ■Smooth sonic transducer face ■Cylindrical housing M30, potted ■Connection via M12 × 1 male connector ■Measuring range adjustable via Easy-Teach ■Temperature compensation ■Blind zone: 30 cm ■Range: 300 cm ■Resolution: 1 mm ■Aperture angle of sonic cone: ±15 ° ■1 × analog output,	TURCKTurck, Inc. 图尔克德国图尔克集团公司	TURCK
RU300U-M30M-2UP8X2-H1151	Ultrasonic Sensor – Diffuse Mode Sensor Features ■Smooth sonic transducer face ■Cylindrical housing M30, potted ■Connection via M12 × 1 male connector ■Measuring range adjustable via Easy-Teach ■Temperature compensation ■Blind zone: 30 cm ■Range: 300 cm ■Resolution: 1 mm ■Aperture angle of sonic cone: ±15 ° ■2 x switching outp	TURCKTurck, Inc. 图尔克德国图尔克集团公司	TURCK
RU3030M2-TP	N-Channel Enhancement Mode MOSFET Features © Roson, Ves@10V.Io@16A	TECHPUBLIC 台舟电子	TECHPUBLIC
RU304B	N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter	VBSEMI 微碧半导体	VBSEMI
RU306C	N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter	VBSEMI 微碧半导体	VBSEMI
RU30A	Fast-Recovery Rectifier Diodes Fast-Recovery Rectifier Diodes 600V	Sanken 三垦	Sanken
RU30A	Fast-Recovery Rectifier Diodes 100V-600V 1.5A-2.0A RU 3M/3AM RU3YX RU 30 series	TAYCHIPST 泰迪斯电子	TAYCHIPST
RU30A	High Efficiency Rectifiers VOLTAGE RANGE: 200--- 600 V CURRENT: 3.5 , 2.0 A Features Low cost Diffused junction High current capability Low leakage Low forward voltage drop Easily cleaned with freon, alcohol, lsopropand and similar solvents Mechanical Data Case: JEDEC DO-27, molded plas	LUGUANG 鲁光电子	LUGUANG
RU30E4B	N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter	VBSEMI 微碧半导体	VBSEMI
RU30P3B	P-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter	VBSEMI 微碧半导体	VBSEMI
RU30P4B	P-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter	VBSEMI 微碧半导体	VBSEMI
RU30P4C	P-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter	VBSEMI 微碧半导体	VBSEMI
RU30P4C6	P-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch	VBSEMI 微碧半导体	VBSEMI
RU30Z	Fast-Recovery Rectifier Diodes 100V-600V 1.5A-2.0A RU 3M/3AM RU3YX RU 30 series	TAYCHIPST 泰迪斯电子	TAYCHIPST
RU30Z	High Efficiency Rectifiers VOLTAGE RANGE: 200--- 600 V CURRENT: 3.5 , 2.0 A Features Low cost Diffused junction High current capability Low leakage Low forward voltage drop Easily cleaned with freon, alcohol, lsopropand and similar solvents Mechanical Data Case: JEDEC DO-27, molded plas	LUGUANG 鲁光电子	LUGUANG
RU30A	HIGH EFFCIENCY RECTIFIER DIODES 文件：404.503 Kbytes Page：2 Pages	SUNMATE 森美特 PDF上传者：深圳冠荣电子有限公司	SUNMATE
RU30100L	N-Channel 30-V (D-S) MOSFET 文件：1.00246 Mbytes Page：7 Pages	VBSEMI 微碧半导体	VBSEMI
RU30100L	N-Channel Advanced Power MOSFET 文件：286.96 Kbytes Page：9 Pages	RUICHIPS 锐骏半导体	RUICHIPS
RU30100M	N-Channel Advanced Power MOSFET 文件：392.53 Kbytes Page：8 Pages	RUICHIPS 锐骏半导体	RUICHIPS
RU30100R	N-Channel Advanced Power MOSFET 文件：313.29 Kbytes Page：9 Pages	RUICHIPS 锐骏半导体	RUICHIPS
RU30105L	N-Channel Advanced Power MOSFET 文件：300.86 Kbytes Page：9 Pages	RUICHIPS 锐骏半导体	RUICHIPS
RU30105R	N-Channel Advanced Power MOSFET 文件：311.51 Kbytes Page：9 Pages	RUICHIPS 锐骏半导体	RUICHIPS
RU30106L	N-Channel Advanced Power MOSFET 文件：303.72 Kbytes Page：9 Pages	RUICHIPS 锐骏半导体	RUICHIPS
RU3010H	N-Channel Advanced Power MOSFET 文件：273.75 Kbytes Page：9 Pages	RUICHIPS 锐骏半导体	RUICHIPS
RU30120L	N-Channel Advanced Power MOSFET 文件：283.34 Kbytes Page：9 Pages	RUICHIPS 锐骏半导体	RUICHIPS
RU30120L	N-Channel MOSFET uses advanced SGT technology 文件：1.86399 Mbytes Page：7 Pages	DOINGTER 杜因特	DOINGTER
RU30120M	N-Channel Advanced Power MOSFET 文件：298.72 Kbytes Page：9 Pages	RUICHIPS 锐骏半导体	RUICHIPS
RU30120R	N-Channel Advanced Power MOSFET 文件：284.69 Kbytes Page：9 Pages	RUICHIPS 锐骏半导体	RUICHIPS
RU30120S	N-Channel Advanced Power MOSFET 文件：329.03 Kbytes Page：8 Pages	RUICHIPS 锐骏半导体	RUICHIPS
RU3013H	N-Channel Advanced Power MOSFET 文件：274.29 Kbytes Page：9 Pages	RUICHIPS 锐骏半导体	RUICHIPS
RU3013H	N-Channel MOSFET uses advanced trench technology 文件：1.38734 Mbytes Page：4 Pages	DOINGTER 杜因特	DOINGTER
RU30140R	N-Channel Advanced Power MOSFET 文件：294.44 Kbytes Page：9 Pages	RUICHIPS 锐骏半导体	RUICHIPS
RU30160R	N-Channel Advanced Power MOSFET 文件：283.65 Kbytes Page：9 Pages	RUICHIPS 锐骏半导体	RUICHIPS
RU30160S	N-Channel Advanced Power MOSFET 文件：334.48 Kbytes Page：8 Pages	RUICHIPS 锐骏半导体	RUICHIPS
RU30200M	N-Channel Advanced Power MOSFET 文件：389.72 Kbytes Page：8 Pages	RUICHIPS 锐骏半导体	RUICHIPS
RU3020H	N-Channel Advanced Power MOSFET 文件：302.68 Kbytes Page：9 Pages	RUICHIPS 锐骏半导体	RUICHIPS
RU3020H	N-Channel MOSFET uses advanced trench technology 文件：920.05 Kbytes Page：5 Pages	DOINGTER 杜因特	DOINGTER
RU3020H	N-Channel 20V (D-S) MOSFET 文件：1.00655 Mbytes Page：9 Pages	VBSEMI 微碧半导体	VBSEMI
RU3020L	N-Channel Advanced Power MOSFET Super High Dense Cell Design 文件：297.86 Kbytes Page：9 Pages	RUICHIPS 锐骏半导体	RUICHIPS
RU3020L	N-Channel MOSFET uses advanced trench technology 文件：1.14366 Mbytes Page：4 Pages	DOINGTER 杜因特	DOINGTER
RU30230R	N-Channel Advanced Power MOSFET 文件：450.12 Kbytes Page：11 Pages	RUICHIPS 锐骏半导体	RUICHIPS
RU30231R	N-Channel Advanced Power MOSFET 文件：310.81 Kbytes Page：9 Pages	RUICHIPS 锐骏半导体	RUICHIPS
RU30290R	N-Channel Advanced Power MOSFET 文件：310.5 Kbytes Page：9 Pages	RUICHIPS 锐骏半导体	RUICHIPS
RU30291R	N-Channel Advanced Power MOSFET 文件：313.06 Kbytes Page：9 Pages	RUICHIPS 锐骏半导体	RUICHIPS
RU30300R	N-Channel Advanced Power MOSFET 文件：449.84 Kbytes Page：11 Pages	RUICHIPS 锐骏半导体	RUICHIPS
RU3030M2	N-Channel Advanced Power MOSFET 文件：341.68 Kbytes Page：8 Pages	RUICHIPS 锐骏半导体	RUICHIPS
RU3040D400CK	ALL-IN-ONE RINGLESS US 400A 文件：104.1 Kbytes Page：2 Pages	SCHNEIDER 施耐德	SCHNEIDER
RU3040D400CL	ALL-IN-ONE RINGLESS UG 400A 文件：100.6 Kbytes Page：2 Pages	SCHNEIDER 施耐德	SCHNEIDER

RU30产品属性

类型
描述
型号
RU30
制造商
Panasonic Industrial Company
功能描述
DIODE

RU30供应商更多...

更新时间：2025-11-23 10:18:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市向鸿伟业电子有限公司	RU30J30M	RUICHIPS	2403+	DFN5060	11809	原装现货!欢迎随时咨询!	询价
深圳市东来宝电子科技有限公司	RU30L30M	RUICHIPS/锐骏	24+	QFN3X3	27950	郑重承诺只做原装进口现货	询价
深圳市壹芯创科技有限公司	RU3030M2	RUICHIPS	24+	SMD	30000	只做原装!公司现货库存!QQ:2369405325	询价
深圳市宇创芯科技有限公司	RU30P4C6	RUICHIPS	24+	SOT23-6	9600	原装现货,优势供应,支持实单!	询价
现代芯城（深圳）科技有限公司	RU3030M2-VB		24+	N/A	58000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市河锋鑫科技有限公司	RU30D8H	RUICHIPS	20+	SOP-8	120000	原装正品可含税交易	询价
深圳市莱克讯科技有限公司	RU30E30L	RUICHIPS	1925+	TO-252	12500	原装现货价格优势可供更多可出样	询价
深圳市南科功率半导体有限公司	RU30L30M	NK/南科功率	2025+	DFN3*3	986966	国产	询价
深圳市威尔健半导体有限公司	RU30S5HCGTR	RUICHIPS/锐骏	23+	SOP8	50000	全新原装正品现货,支持订货	询价
富凯科技(深圳）有限公司	RU30L40M2	RUICHIPS	24+	PDFN3333	9000	只做原装，欢迎询价，量大价优	询价

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RU3030M2
原装贴片 RU3030M2 PDFN3333 30V 30A N沟道 MOS场效应管
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RU3030M2-A,全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
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RU3018M2 全新原装现货
RU3018M2,全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
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RU20L7C，SOT23-3，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
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RU30产品属性

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DdatasheetPDF页码索引