POWER FIELD EFFECT TRANSISTOR

[Champion Microelectronic Corporation] GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanc

PIN Diode 5 Section Attenuator

FEATURES ■ 100 - 1000 MHz ■ 7 mA, +5 VDC ■ 1 dB LSB, 31 dB Range ■ TTL Control ■ 24 Pin Surface Mount Package

Hexadecimal and Numeric Displays for Industrial Applications

Description These solid state display devices are designed and tested for use in adverse industrial environments. The character height is 7.4 mm (0.29 inch). The numeric and hexadecimal devices incorporate an on-board IC that contains the data memory, decoder and display driver functions. Th

LOW COST - HIGH PERMORMANCE VOLTAGE CONTROLLED OSCILLATOR

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Advanced Power MOSFET

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